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Các tấm pin năng lượng mặt trời CIGS (SIMS)

In this study, CIGS thin films were prepared on bilayer Mo back contacts and deposited on a soda lime glass (SLG) substrate. The concentration of Na in the CIGS layer was controlled by using samples with and w/o a SiOx film on the SLG substrate. SIMS allowed to characterize the elemental in-depth distribution (matrix species & alkali metals Na and K) in the different CIGS thin films.
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Các loại vật liệu cho năng lượng và chất xúc tác (SIMS)

This study reports a comparative study of nitrogen-doping in Cu2O. SIMS nitrogen concentration depth profiles of the Cu2O:N films doped with nitrogen plasma show: (i) nitrogen incorporation into the films, (ii) its gradual out diffusion during annealing. Results suggests that to enhance the conductivity of Cu2O:N, one needs to increase the doping level and/or optimize the annealing process to balance the activation and outward-diffusion processes.
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Giám sát Dopant trong các thiết bị LED (SIMS)

Optimized doping (Mg, Si, Zn,...) and reduced impurity incorporation (H, C, O, metals) are essential for high efficiency LED devices. Using dynamic SIMS, depth profiles can be recorded up to several microns within minutes, with detection limits from the ppm down to the ppb range depending on the species to be analyzed. Dynamic SIMS also offers high depth resolution, which has been widely used for ultra shallow implant technology. Therefore, the CAMECA SIMS instruments are extremely useful in investigating the composition and characterizing the elemental distribution of dopants and impurities on different layers, making them your best choice for R&D and process control of novel LED devices.  
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Cơ chế biến đổi thủy tinh hạt nhân (SIMS)

The long-term behaviour of glasses used to confine nuclear waste is of prime interest to ensure their safe geological disposal. In order to understand glass alteration mechanisms, it is crucial to study the formation of altered layers (e.g. gel and phyllosilicates for silicate glasses) that develop in contact with acqueous solution. This requires elemental in-depth characterization as well as the use of isotopic tracers which is a powerful method to study the exchanges between the solution and the glass.
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Sự di chuyển Heli trong các lò phản ứng hạt nhân (SIMS)

In nuclear reactors, Helium migration and trapping may lead to swelling, hardening, drastic creep rupture, blistering… To ensure longevity of structural nuclear materials, it is thus of paramount importance to better understand helium diffusion mechanisms and to describe its distribution below the surface.
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