1.2–3.5 GHz Cryogenic Low Noise Amplifier

Manufacturer: Low Noise Factory - Sweden

Model: LNF-LNC1.2_3.5A

Origin: Sweden

LNF-LNC1.2_3.5A is an ultra-low noise cryogenic amplifier using LNF’s proprietary InP HEMT technology. MMIC technology ensures excellent unit-to-unit variation. The LNA is packaged in a coaxial module using industry standard SMA connectors for the RF ports and Nano-D to provide the DC. The lightweight gold plated aluminum module measures 19.4x17.6x7.8 mm excluding the connectors. The LNA is not hermetic and must be operated in a vacuum environment when below the dewpoint. All amplifiers are tested at 296 and 5 K and delivered with a test report.

Product Features
RF Frequency Range: 1.2 – 3.5 GHz
Noise Temperature: 1.3 K
Noise Figure: 0.02 dB
Gain: 31 dB
DC Power Supply (Typical): Vds = 1.0 V, Ids: > = 20 mA
RF Connector: Female SMA Connector
DC Connector: 9-pin Nano-D Female Connector
Power Supply: Single Gate and Single Drain

Absolute Maximum Ratings:
Parameter: Vds (Drain-Source Voltage)
Minimum: -0.5 V
Maximum: 2.7 V

Parameter: Ids (Drain Current):
Maximum: –100 mA
Parameter: Vgs (Gate-Source Voltage)
Minimum: -20 V
Maximum: 20 V
DC voltage at input/output:
Minimum value: -30 V
Maximum value: 30 V
RF input power:
Maximum value: 0 dBm
Operating temperature:
Minimum value: < 3 K
Maximum value: 40 °C

Typical characteristics:
Parameter: Vgs (Gate Voltage)
Value: +1.8 V
Parameter: IRL (Internal Return Loss)
Value: 20 dB
Parameter: ORL (Output Return Loss)
Value: 25 dB
Output power at 1 dB compression point (Output P1dB): -7.3 dBm
Order 3rd order crossover point (OIP3): 8 dBm
Weight: 11 grams