Maskless Lithography System DWL 2000 GS / DWL 4000 GS - Heidelberg Instruments

Key Features

  • Fixed optical system, real-time autofocus, and high-end frictionless air-bearing XY stage.
  • High-resolution interferometer continuously monitors stage position.
  • Advanced climate control, temperature stability of ±0.1°C, ISO 4 environment.
  • Integrated CCD camera and macro camera for effortless alignment.
  • Supports 4 write modes to optimize performance according to specific applications.
  • Generates complex structures directly from CAD files (DXF, BMP, STL, X,Y,Z-ASCII) with up to 1023 grayscale levels.
  • Comprehensive software: manipulate and merge CAD files, design complex patterns, and optimize structures.

Detailed Description

Technology & Principle

The DWL 2000 GS / 4000 GS is a Grayscale laser lithography system utilizing 1023 gray levels (unlike traditional binary lithography). 3D CAD data maps directly to laser intensity, enabling the fabrication of continuous 2.5D structures (microlens arrays, blazed gratings) in a single step.

 

Binary lithography requires multiple masks and alignment steps, leading to overlay errors. For microlenses/holograms, old methods take weeks due to mask design, manufacturing, and repetitive alignment. Photomask costs are extremely high for complex structures. Furthermore, standard software lacks direct 3D CAD to laser signal conversion, causing geometric distortions.

A single-step grayscale process saves cost and mask manufacturing time, making it faster than e-beam lithography. It achieves ultra-smooth surfaces (5nm roughness). The software imports STL/DXF/BMP files for automatic mapping and fully supports GenISys BEAMER.

 

Integration & Expansion

Easily integrates with profilometers and microscopes; compatible with AZ 1500 and AZ 4562 photoresists; cleanroom-ready.

Technical Specifications

Parameter

Value

 

Maximum exposure area200 × 200 mm² (2000 GS), 400 × 400 mm² (4000 GS)
Overlay accuracy (3σ, over 8"x8")300 nm
Write speed (maximum)1250 mm²/min
Maximum throughput5600 mJ/cm² (Mode I)
Autofocus compensation range80 μm
Light sourceLaser diode, 405 nm
Substrate thickness0 – 12 mm
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