Product Overview
High depth resolution and high throughput
With ever shrinking device dimensions, the implant profiles and layer thickness of today’s semiconductors are often in the range of 1-10nm. The SIMS 4550 has been optimized to address these application fields by offering oxygen and cesium high density primary beam with an impact energy programmable from 5keV down to less than 150eV.
Flexibility
CAMECA’s SIMS 4550 is a dynamic SIMS tool offering full flexibility in sputter conditions (impact angle, energy, species). With dedicated options for charge compensation (electron gun, laser) during sample sputtering, insulating materials can be easily analyzed. The SIMS 4550 measures layer thickness, alignment, abruptness, integrity, uniformity and stoechiometry. Sample holders can accommodate a variety of samples: small pieces of a few mm² up to 100mm diameter sample size.
High precision and automation
State-of-the-art quadrupole analyzer optics and superior peak to background performance are key factors for low detection limits for trace elements. The SIMS 4550 offers excellent sensitivity for H, C, N and O thanks to its advanced UHV design with main chamber pressure in the low E-10mbar (E-8Pa) range. Ultra stable ion sources and electronics ensure highest precision and repeatability of measurements down to < 0.2% RSD.
The human factor on precision is well taken into consideration by easy-to-use software, predefined recipes, remote operation and trouble shooting. All instrument settings of each measurement are stored in a database. Repeated measurements are therefore only a few mouse clicks away. Further automation features
Below is a selection of Quadrupole SIMS publications
Imaging and hydrogen analysis by SIMS in zirconium alloy cladding: a dual ion beam approach. N.Mine, S.Portier and M.Martin. Surface and Interface Analysis. Volume 46, Issue S1, pages 249–252, November 2014
Shallow As dose measurements of 300mm patterned wafers with Secondary Ion Mass Spectrometry and Low energy Electron induced X-ray Emission Spectroscopy. H.U. Ehrke, N. Noible, M.P. Moret, F. Horreard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, M. Schuhmacher, J. Vac. Sci. Technolo. B 28 (1), 1071-1023, Jan/Feb 2010
Thickness dependence of hole mobility in ultrathin SiGe-channel p-MOSFETs. C.N. Chleirigh, N.D. Theodore, H. Fukuyama, S. Mure, H.-U. Ehrke, A. Domenicucci, J.L. Hoyt, IEEE Transactions on Electron Devices, Vol. 55, Issue 10, pp 2687-2694, October 2008
SIMS analysis of implanted and RTP annealed wafers for sub-100nm technology. H-U.Ehrke, A.Sears, W.Lerch, S.Paul, G.Roters, D.F.Downey, E.A.Arevalo. Paper at USJ 2003 published in JVST-B 22(1) Jan-Feb 2004
Quantification of Ge and B in SiGe using secondary ion mass spectrometry. H-U.Ehrke, H.Maul, Materials Science in Semiconductor Processing, Vol. 8, Issues 1-3, 2005, 111-114
Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resitive Si1-xGex alloy layers. M. G. Dowsett and al. Applied surface science, 9299 (2002) 1-4
Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. M. G. Dowsett et al, Phys. Rev. B 65, 113412 (2002)
